AON3814 20v dual n-channel mosfet general description product summary v ds i d (at v gs =4.5 v) 6a r ds(on) (at v gs = 4.5 v) < 17 m w r ds(on) (at v gs = 4v) < 18.5m w r ds(on) (at v gs = 3.1 v) < 23 m w r ds(on) (at v gs = 2.5v) < 24 m w esd protected symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl typ t c =25c 1.6 t c =70c junction and storage temperature range -55 to 150 thermal characteristics units max parameter maximum junction-to-ambient a c/w r q ja 40 75 50 c pulsed drain current b continuous drain current f t c =25c power dissipation f v 1 2 gate-source voltage drain-source voltage 20 the AON3814 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v t c =70c a maximum junction-to-lead c c/w c/w maximum junction-to-ambient a 30 95 40 p d w 2.5 i d 6 5.3 40 dfn 3x3 top view bottom view pin 1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view g1 g2 d1 s1 d2 s2 rev 6.0:july 2019 www.aosmd.com page 1 of 5 downloaded from: http:///
AON3814 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.3 0.7 1.1 v i d(on) 40 a 12.5 17 t j =125c 18.5 24 12.9 18.5 m w 14 23 m w 15.6 24 m w 23 m w g fs 33 s v sd 0.6 1 v i s 3.5 a c iss 730 920 1100 pf c oss 110 155 200 pf c rss 45 75 105 pf r g 2.4 k w q g 8.8 11 13 nc q gs 1.6 2 2.4 nc q gd 1.9 3.2 4.5 nc t d(on) 0.3 m s t r 0.6 m s t d(off) 7.9 m s t f 4.4 m s applications or use as critical components in life sup port devices or systems are not authorized. aos doe s not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design,functions and reliability without noti ce. r ds(on) maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.7 w , r gen =3 w v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =4.5v, v ds =10v, i d =6a gate source charge gate drain charge switching parameters gate resistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage m w i s =1a,v gs =0v v ds =5v, i d =6a v gs =1.8v, i d =6a v gs =4v, i d =6a v gs =3.1v, i d =6a v gs =2.5v, i d =6a on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =6a reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz v ds =v gs i d =250 m a v ds =0v, v gs = 10v gate-body leakage current forward transconductance static drain-source on-resistance diode forward voltage a. the value of r q ja is measured with the device mounted on 1in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction- to -ambient thermal resistance. c. repetitive rating, pulse width limited by junction temper ature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -ambient thermal impedance which is measured with the devic e mounted on 1in 2 fr -4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 6.0:july 2019 www.aosmd.com page 2 of 5 downloaded from: http:///
AON3814 typical electrical and thermal characteristics 17 52 10 0 18 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =2.5v v gs =3.1v 1.0e- 05 1.0e- 04 1.0e- 03 1.0e- 02 1.0e- 01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6a v gs =2.5v i d =6a v gs =4v i d =6a 5 10 15 20 25 30 35 40 0 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v i d =6a 25 c 125 c 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4v 10v 3v rev 6.0: july 2019 www.aosmd.com page 3 of 5 downloaded from: http:///
AON3814 typical electrical and thermal characteristics 17 52 10 0 18 40 0 1 2 3 4 5 0 2 4 6 8 10 12 14 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction- to - case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) c oss c rss v ds =10v i d =6a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c 100 m s r q ja =95 c/w rev 6.0: july 2019 www.aosmd.com page 4 of 5 downloaded from: http:///
AON3814 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 6.0: july 2019 www.aosmd.com page 5 of 5 downloaded from: http:///
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